Course Micro and Nano Devices
The enrollment will be effected on the OPAL platform, where you'll find further informations about the course.
Course Content
Lecture Complexes- Semicondcuctor basics
- pn-junction / diode
- MOS-Transistor basics
- MOS transistors with sizes in the sub-100nm range
- New MOS transistor concepts (Multi-gate transistors, FinFETs, etc.)
- Single-electron transistors
- Quantum devices (Resonant tunnel diodes - RTDs, etc.)
- Bipolar transistors with sizes in the sub-1µm range
- Carbon nano-tubes
- Wave, Particle and Carriers in the Semiconductor
- pn Junction and Diode (generation and recombination effects, currents in diodes)
- MOS Transistor (calculation of important parameters, short and long channel effects, breakdown mechanism)
- The MOS field effect transistor (Measuring)
- Simulation of a MOSFET using ELDO / PSpice
Degree Programs
- Compulsory Subject in the 1st Semester of the Master Course Micro and Nano Systems (M_MN__1)
Timetable for the current Semester
| Type | Weekday | Groups | Time | Room | Start |
|---|---|---|---|---|---|
| L | on Mondays | M_MN1_1, M_MN2_1, M_DT__1 | 13.45-15.15 | C22.201 | 2024-10-14 |
| E | on Tuesdays, 2nd week | M_MN1_1, M_MN2_1, M_DT__1 | 15.30-17.00 | C22.101 | 2024-10-15 |
| P | on Tuesdays | M_MN1_1, M_MN2_1, M_DT__1 | 11.30-15.15 | C25.368 | 2024-10-29 |
Teaching Materials
- Lecture slides
- 1 - Introduction
- 2 - Semicondcuctor Basics
- 3 - Charges in Semiconductors
- 4 - Currents in Semiconductors
- 5 - The pn-junction
- 6 - The diode
- 7 - MOS-Transistor Basics
- 8 - Short-Channel MOS-Transistors I
- 9 - Short-Channel MOS-Transistors II (WS 23/24)
- Worksheets
- Worksheet 1 (Wave, Particle and Carrier in the Semiconductor)
- Worksheet 2 (pn Junction and Diode 1)
- Worksheet 3 (pn Junction and Diode 2)
- Worksheet 4 (Integrated MOS Transistors 1) (WS 23/24)
- Worksheet 5 (Integrated MOS Transistors 2) (WS 23/24)
- Worksheet 6 (Integrated MOS Transistors 3) (WS 23/24)
- Worksheet 7 (Integrated MOS Transistors 4) (WS 23/24)
- Lab Guides
- IE-5 (The MOS Field Effect Transistor (Measuring))
- ES-4 (Simulation of a MOSFET using ELDO)
- ES-4 (Simulation of a MOSFET using PSpice)
Examination current Semester
| Date / Time: | Monday, 2025-02-24, 2 - 5 pm |
|---|---|
| Room: | C10.115 (old: 2/N115) |
| Type: | Written examination |
| Permitted: | Pocket calculator (w/o Bluetooth / Wifi), empty sheets of gridded paper, formula sheet will be provided |
| Examiner: | Prof. Horstmann, M.Eng. Hafez |
| Surveillance: | DI Loebel |
