Honorarprofessur Nanoelectronics Technologies
Publikationen
Honorarprofessur Nanoelectronics Technologies 

Publikationen

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Jahr 2004

Bonitz,J.; Schulz,S.E.; Gessner,T.: Ultra thin CVD TiN layers as diffusion barrier films on porous low-k materials. Microelectronic Engineering, 76 (2004) pp 82-88
Ecke,R.; Schulz,S.E.; Hecker,M.; Engelmann,H.-J.; Gessner,T.: W(Si)N Diffusion Barriers for Cu Metallization deposited by PECVD. Advanced Metallization Conference AMC 2004, San Diego, USA, 2004 Oct 19-21
Fruehauf,S.; Schulz,S.E.; Gessner,T.: Integrationspotential mesoporöser SiO2-Schichten als ultra-low-k Dielektrikum. Vakuum in Forschung und Praxis, 16 (2004) pp 194-198 (ISSN 0947-076X)
Gessner,T.; Schulz,S.E.: Selected Challenges for Advanced Interconnect Systems. Invited Talk, E-MRS 2004, Strasbourg (France), 2004 May 24-28
Himcinschi,C.; Friedrich,M.; Fruehauf,S.; Schulz,S.E.; Gessner,T.; Zahn,D.R.T.: Contributions to the static dielectric constant of low-k xerogel films derived from ellipsometry and IR spectroscopy. Thin Solid Films, 455-456 (2004) pp 433-437
Koerner,H.; Bueyuektas,K.; Eisener,B.; Liebmann,R.; Schulz,S.E.; Seidel,U.; Gessner,T.: Impact of Ultra Low k dielectrics on RF-Performance of Inductors. Advanced Metallization Conference AMC 2004, San Diego, USA, 2004 Oct 19-21
Puschmann,R.; Schwarzer,N.; Fruehauf,S.; Richter,F.; Schulz,S.E.; Gessner,T.: Neues Konzept für den Eindruckversuch an porösen Schichten. DPG Frühjahrstagung 2004, 2004 Mar
Puschmann,R.; Schwarzer,N.; Richter,F.; Fruehauf,S.; Schulz,S.E.: A usable concept for the indentation of thin porous films. NanoMech Workshop, Hückelhoven, 2004 Sep
Schulz,S.E.: CVD Thin Films for Barrier, Hard Mask, Etch and CMP Stop Application, Short Course Lecture. Advanced Metallization Conference AMC 2004, San Diego (USA), 2004 Oct 18
Schulz,S.E.; Blaschta,F.; Eisener,B.; Fruehauf,S.; Schulze,K.; Seidel,U.; Koerner,H.; Gessner,T.: SiO2 Aerogel ULK Integration into Copper Damascene Interconnects for RF Devices. Advanced Metallization Conference (AMC 2003), Conf. Proc. AMC XIX, MRS Warrendale PA (2004) pp 97-105 (ISBN 1-55899-757-1)
Schulz,S.E.; Ecke,R.: Advanced CVD Technology for Diffusion Barrier and Cu Deposition, Invited talk. 3rd International Semiconductor Technology Conference (ISTC 2004), Shanghai, China, 2004 Sep 15-17
Schulze,K.; Schulz,S.E.; Fruehauf,S.; Gessner,T.: Improvement of mechanical integrity of ultra low k dielectric stack and CMP compatibility. Microelectronic Engineering, 76 (2004) pp 38-45
Schulze,K.; Schulz,S.E.; Fruehauf,S.; Koerner,H.; Seidel,U.; Schneider,D.; Gessner,T.: Improvement of mechanical integrity of ultra low-k dielectric stack and CMP compatibility. Materials for Advanced Metallization (MAM), Brussels (Belgium), 2004 Mar 7-10; Microelectronic Eng., 76 (2004) pp 38-45
Shen,Y.Z.; Leschke,M.; Schulz,S.E.; Ecke,R.; Gessner,T.; Lang,H.: Synthesis of tri-n-butylphosphine copper(I) beta-diketonates and their use in chemical vapour deposition of copper. CHINESE JOURNAL OF INORGANIC CHEMISTRY, 20 (11) (2004) pp 1257-1264 (ISSN 1001-4861)
Zimmermann,S.; Ecke,R.; Rennau,M.; Schulz,S.E.; Hecker,M.; Voss,A.; Engelmann,H.-J.; Mattern,N.; Zschech,E.; Gessner,T.: Characterisation of a PECVD WNx Barrier Layer Against Copper Diffusion. Advanced Metallization Conference (AMC 2003), Conf. Proc. AMC XIX, MRS Warrendale PA (2004) pp 397-402 (ISBN 1-55899-757-1)

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