Publikationen
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Jahr 2005
Blaschta,F.; Schulz,S.E.; Gessner,T.: Impact of reducing resist stripping processes at elevated temperature on ULK and HM materials. Materials for Advanced Metallization - MAM, Dresden, 2005 March 6-9; Microelectronic Eng. 82/3-4 (2005) 427-433 (ISSN 0167-9317) |
Blaschta,F.; Schulz,S.E.; Gessner,T.: H2-Strip Processes on Low-k Materials, Talk. European Congress on Advanced Materials and Processes EUROMAT, Prague, Czech Republic, 2005 Sep 5-8 |
Bonitz,J.; Ecke,R.; Schulz,S.E.; Gessner,T.: Different SiH4 Treatments of CVD TiN Barrier Layers . Materials for Advanced Metallization - MAM, Dresden, 2005 March 6-9; Microelectronic Eng. 82/3-4 (2005) 618-622 (ISSN 0167-9317) |
Ecke,R.; Schulz,S.E.; Hecker,M.; Engelmann,H.-J.; Gessner,T.: W(Si)N Diffusion Barriers for Cu Metallization deposited by PECVD. Advanced Metallization Conference 2004, San Diego CA, U.S.A., 2004 Oct 19-21; MRS Conf. Proc. AMC XX, Material Research Society, Warrendale PA (2005), pp 793-799 (ISBN 1-55899-814-4 / ISSN 1048-0854) |
Fruehauf,S.; Himcinschi,C.; Rennau,M.; Schulze,K.; Schulz,S.E.; Friedrich,M.; Gessner,T.; Zahn,D.R.T.; Le,Q.T.; Caluwaerts,R.: Scaling down thickness of ULK materials for 65nm node and below and its effect on electrical performance. Materials for Advanced Metallization - MAM, Dresden, 2005 March 6-9; Microelectronic Eng. 82/3-4 (2005) 405-410 (ISSN 0167-9317) |
Gessner,T.; Schulz,S.E.; Hiller,K.; Otto,T.; Radehaus,C.; Doetzel,W.; Mueller,D.; Loebner,B.; Wanielik,G.; Neubert,U.; Lutz,J.: Profillinie 3: Mikroelektronik und Mikrosystemtechnik. FORSCHUNG MIT PROFIL, pp 1-162 (ISSN 0946-1817) |
Gessner,T.; Schulz,S.E.; Schulze,K.; Ecke,R.; Fruehauf,S.; Streiter,R.: Challenges of Advanced Interconnect Systems: Cu diffusion barrier, porous low k dielectrics and thermal issues, Invited Talk. ICMAT 2005, Singapore, 2005 June |
Koerner,H.; Bueyuektas,K.; Eisener,B.; Liebmann,R.; Schulz,S.E.; Seidel,U.; Gessner,T.: Impact of Ultra Low k dielectrics on RF-Performance of Inductors. Advanced Metallization Conference 2004, San Diego CA, U.S.A., 2004 Oct 19-21; MRS Conf. Proc. AMC XX, Material Research Society, Warrendale PA (2005), pp 143-149 (ISBN 1-55899-814-4 / ISSN 1048-0854) |
Puschmann,R.; Schwarzer,N.; Richter,F.; Fruehauf,S.; Schulz,S.E.: A usable concept for the indentation of thin porous films. Z. Metallkd., 96/11 (2005) pp 1272-1277 (ISSN 0044-3093) |
Schmidt,H.; Jakob,A.; Haase,T.; Kohse-Hoeinghaus,K.; Schulz,S.E.; Waechtler,T.; Gessner,T.; Lang,H.: nBu3P-Silber(I)-β-Diketonate: Synthese, Gasphasenuntersuchungen und Verwendung als CVD-Precursoren. Zeitschrift für Anorganische und Allgemeine Chemie, 631 (13-14) (2005) pp 2786-2791 (ISSN 0044-2313) |
Schneider,D.; Fruehauf,S.; Schulz,S.E.; Gessner,T.: The current limits of the laser-acoustic test method to characterize low-k films. Materials for Advanced Metallization - MAM, Dresden, 2005 March 6-9; Microelectronic Eng. 82/3-4 (2005) 393-398. (ISSN 0167-9317) |
Schulze,K.; Schuldt,U.; Kahle,O.; Schulz,S.E.; Uhlig,M.; Uhlig,C.; Dreyer,C.; Bauer,M.; Gessner,T.: Novel low-k polycyanurates for integrated circuit (IC) metallization. Materials for Advanced Metallization - MAM, Dresden, 2005 March 6-9; Microelectronic Eng. 82/3-4 (2005) 356-361 (ISSN 0167-9317) |
Schulze,K.; Schuldt,U.; Kahle,O.; Schulz,S.E.; Uhlig,M.; Uhlig,C.; Dreyer,C.; Bauer,M.; Gessner,T.: Polycyanurates – A Low-k Material Approach. European Congress on Advanced Materials and Processes EUROMAT, Prague, Czech Republic, 2005 Sep 05-08 |
Schulze,K.; Schulz,S.E.; Rennau,M.; Gessner,T.: Formation of Air Gap structures via wet etch removal of sacrificial dielectrics (Talk). Advanced Metallization Conference (AMC) 2005, Colorado Springs CO (USA), 2005 Sep 27-29 |
Shen,Y.; Jakob,A.; Djiele,P.; Schulz,S.E.; Gessner,T.; Lang,H.: Phosphane- and Phosphite-Silver(I)-a-Hydroxy-Carboxylates and -Glycinates: Synthesis and their Use as CVD Precursors . J. Organomet. Chem. |
Shen,Y.; Rueffer,T.; Schulz,S.E.; Gessner,T.; Wittenbecher,L.; Sterzel,H.-J.; Lang,H.: Me3SiC≡C-CMe=CH2 copper(I) β-diketonates: Synthesis, solid state structure, and low-temperature chemical vapour deposition. Journal of Organometallic Chemistry, 690 (17) (2005) pp 3878-3885 (ISSN 0022-328X) |