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Honorarprofessur Nanoelectronics Technologies
Publikationen
Honorarprofessur Nanoelectronics Technologies 

Publikationen

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Jahr 2006

Ecke,R.; Rennau,M.; Zimmermann,S.; Schulz,S.E.; Gessner,T.: Influence of barrier crystallization on CV characteristics of MIS structures (poster). Advanced Metallization Conference (AMC), San Diego (USA), 2006 Oct 17-19
Fruehauf,S.; Schulz,S.E.; Gessner,T.: Mesoporous SiO2 as low-k dielectric for integration in Cu/low-k interconnect systems. Vacuums Best, (2006) pp 31-36
Gottfried,K.; Schubert,I.; Schulz,S.E.; Gessner,T.: Cu/barrier CMP on porous low-k based interconnect schemes. MAM, Grenoble (France), 2006 Mar 6-8; Microelectronic Engineering, 83 (2006) p 2218–2224
Schulz,S.E.; Gessner,T.: Achieving ultra low dielectric constant for nanoelectronics interconnect systems, Invited talk . FORNEL Workshop, Wuerzburg, 2006 Mar 15
Schulz,S.E.; Schulze,K.: Achieving ultra low k dielectric constant for nanoelectronics interconnect systems, Invited talk. 2006 8th International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2006, Shanghai (China), 2006 Oct 23-26; pp 298-301 (ISBN Print version: 1-4244-0160-7; CD-ROM version: 1-4244-0161-5)
Schulze,K.; Schulz,S.E.; Gessner,T.: Impact of Dielectric Material and Metal Arrangement on Thermal Behaviour of Interconnect Systems (Talk). Advanced Metallization Conference (AMC), San Diego (USA), 2006 Oct 17-19
Schulze,K.; Schulz,S.E.; Gessner,T.: Evaluation of air gap structures produced by wet etch of sacrificial dielectrics: Extraction of keff for different technology nodes and film permittivity. Materials for Advanced Metallization (MAM), Grenoble (France), 2006 Mar 4-6; Microelectronic Engineering, Volume 83, Issues 11-12 (2006) pp 2324-2328 (ISSN 0167-9317)
Schulze,K.; Schulz,S.E.; Rennau,M.; Gessner,T.: Formation of Air Gap structures via wet etch removal of sacrificial dielectrics. Advanced Metallization Conference 2005, Colorado Springs CO, U.S.A., 2005 Sept 27-29; MRS Conf. Proc. AMC XXI, Material Research Society, Warrendale PA (2006), pp 309-316 (ISBN 1-55899-865-9 / ISSN 1048-0854)
Schulze,K.; Schulz,S.E.; Rennau,M.; Gessner,T.: Evaluation of Air Gap structures produced by wet etch of sacrificial dielectrics (Talk). IEEE EDS Workshop on Advanced Electron Devices, Duisburg (Germany), 2006 June 13-14
Waechtler,T.; Gruska,B.; Zimmermann,S.; Schulz,S.E.; Gessner,T.: Optical Properties of Sputtered Tantalum Nitride Films Determined by Spectroscopic Ellipsometry. Talk given at the 4th Workshop on Ellipsometry, Berlin (Germany), 2006 Feb 20-22 (ISBN 978-3-00-018751-3)
Waechtler,T.; Gruska,B.; Zimmermann,S.; Schulz,S.E.; Gessner,T.: Characterization of Sputtered Ta and TaN Films by Spectroscopic Ellipsometry. Talk given at the 8th International Conference on Solid-State and Integrated Circuit Technology, ICSICT-2006, Shanghai (China), 2006 Oct 23-26; Proceedings, pp 2184-2186 (ISBN Print version: 1-4244-0160-7; CD-ROM version: 1-4244-0161-5)
Waechtler,T.; Shen,Y.Z.; Jakob,A.; Ecke,R.; Schulz,S.E.; Wittenbecher,L.; Sterzel,H.-J.; Tiefensee,K.; Oswald,S.; Schulze,S.; Lang,H.; Hietschold,M.; Gessner,T.: Evaluation of Phosphite and Phosphane Stabilized Copper(I) Trifluoroacetates as Precursors for the Metal-Organic Chemical Vapor Deposition of Copper. Poster presented at the Materials for Advanced Metallization Conference - MAM 2006, Grenoble (France), 2006 Mar 6-8