Publikationen
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Jahr 2010
| Ahner,N.; Zimmermann,S.; Schaller,M.; Schulz,S.E.: Optimized wetting behavior of water-based cleaning solutions for plasma etch residue removal by application of surfactants. 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces, Ostende (Belgium), 2010 Sep 20-22; Proceedings, pp 48-49 |
| Belsky,P.; Streiter,R.; Wolf,H.; Schulz,S.E.; Aubel,O.; Gessner,T.: Modeling of TDDB in advanced Cu interconnect systems under BTS conditions (Talk). Advanced Metallization Conference 2010, Albany, NY (USA), 2010 Oct 5-7 |
| Ding,S.-F.; Xie,Q.; Waechtler,T.; Lu,H.-S.; Schulz,S.E.; Qu,X.-P.: Inhibition of enhanced Cu oxidation on ruthenium. 2010 International Interconnect Technology Conference (IITC), Burlingame, CA (USA), 2010 Jun 6-9; Proceedings, pp 1-3 (ISBN 978-1-4244-7676-3) |
| Fischer,T.; Ahner,N.; Zimmermann,S.; Schaller,M.; Schulz,S.E.: Influence of thermal cycles on the silylation process for recovering k-value and chemical structure of plasma damaged ultra-low-k materials (Talk). Advanced Metallization Conference, Albany, NY (USA), 2010 Oct 5-7 |
| Gessner,T.; Vogel,M.; Otto,T.; Schulz,S.E.; Baumann,R.R.: Business Units and Core Competences of Fraunhofer ENAS . Micromaterials and Nanomaterials , 12 (2010) pp 4-7 (ISSN 1619-2486) |
| Gessner,T.; Vogel,M.; Schulz,S.E.; Wiemer,M.; Hiller,K.; Kurth,S.: Mikro- und Nanotechnologien für Smart Integrated Systems.. Industrie Management, 6 (2010) (ISBN 1434-1980, ISBN-13: 97839442183215) |
| Hermann,S.; Fiedler,H.; Waechtler,T.; Falke,M.; Ecke,R.; Schulz,S.E.; Gessner,T.: Approaches for Fabrication of Carbon Nanotube Vias. Nanoelectronic Days 2010, Aachen (Germany), 2010 Oct 4-7; Poster presentation |
| Hermann,S.; Loschek,S.; Haibo,Y.; Bonitz,J.; Schulz,S.E.; Gessner,T.: Integration von Kohlenstoffnanoröhren für MEMS/NEMS Anwendungen.. 10. Chemnitzer Fachtagung Mikrosystemtechnik - Mikromechanik & Mikroelektronik, 2010 Oct 20 - 21 (ISBN 978-3-00-032052-1) |
| Hermann,S.; Pahl,B.; Ecke,R.; Schulz,S.E.; Gessner,T.: Carbon Nanotubes for Nanoscale low temperature flip chip connections.. Microelectronic Engineering, 87, 3 (2010) pp 438 - 442 |
| Hofmann,L.; Braeuer,J.; Baum,M.; Schulz,S.E.; Gessner,T.: Electrochemical deposition of reactive nanoscale metallization systems for low temperature bonding in 3D integration. AMC, Baltimore (USA), October 13-15, 2009; Proceeding of the Advanced Metallization Conference 2009, pp 241-251 (ISBN 987-1-60511-218-3) |
| Hofmann,L.; Ecke,R.; Schulz,S.E.; Gessner,T.: Investigations Regarding Through Silicon Via Filling for 3D Integration by Periodic Pulse Reverse Plating with and without Additives. Materials for Advanced Metallization (MAM), Mechelen (Belgium), 2010 Mar 7-10; Microelectron. Eng., (2010) p in press (DOI: 10.1016/j.mee.2010.07.004) (ISSN 0167-9317) |
| Hofmann,L.; Ecke,R.; Schulz,S.E.; Gessner,T.: Pulse Reverse Electroplating for TSV Filling in 3D Integration. Smart Systems Integration, Como (Italy), 2010 Mar 23-24; Proceedings (ISBN 978-3-8007-3081-0) |
| Hofmann,L.; Ecke,R.; Schulz,S.E.; Gessner,T.: Metallisierungsverfahren für die 3D Integration in der Mikroelektronik und Mikrosystemtechnik. Galvanotechnik, 08/2010 (2010) pp 1880-1884 (ISBN ISSN 0016-4232 B 20696) |
| Jakob,A.; Rueffer,T.; Ecorchard,P.; Walfort,B.; Koerbitz,K.; Fruehauf,J.; Schulz,S.E.; Gessner,T.; Lang,H.: Phosphane copper(I) dicarboxylates: Synthesis and their potential use as precursors for the spin-coating process in the deposition of copper.. Zeitschrift für Anorganische und Allgemeine Chemie, 636, 11 (2010) pp 1931 - 1940 (ISSN 1521-3749) |
| Jakob,A.; Rueffer,T.; Schmidt,H.; Djiele,P.; Koerbitz,K.; Ecorchard,P.; Haase,T.; Kohse-Hoeinghaus,K.; Fruehauf,S.; Waechtler,T.; Schulz,S.E.; Gessner,T.; Lang,H.: Disilver(I) Coordination Complexes: Synthesis, Reaction Chemistry, and Their Potential Use in CVD and Spin-Coating Processes for Silver Deposition. Eur. J. Inorg. Chem., (2010) pp 2975-2986 (ISSN 1434-1948) |
| Mothes,R.; Shen,Y.; Jakob,A.; Walfort,B.; Rueffer,T.; Schulz,S.E.; Waechtler,T.; Gessner,T.; Lang,H.: Phosphite Copper(I)Trifluoroacetates [((RO)3P)mCuO2CCF3](m = 1, 2, 3): Synthesis, Solid State Structures and Their Use as CVD Precursors.. Dalton Transactions, 39, 46 (2010) pp 11235 - 11247 |
| Mueller,S.; Waechtler,T.; Tuchscherer,A.; Mothes,R.; Schulz,S.E.; Gessner,T.; Lang,H.: Investigation of Formic Acid Reduction of Ruthenium-Containing Copper Oxide Layers Prepared by ALD . Baltic ALD 2010 & GerALD 2, Hamburg, 16.09.-17.09.; Talk |
| Oszinda,T.; Schaller,M.; Dittmar,K.; Jinag,L.; Schulz,S.E.: How to evaluate surface free energies of dense and ultra low-k dielectrics in pattern structure.. ECS Transactions, 28, 2 (2010) pp 355 - 360 (ISSN 1938-6737) |
| Oszinda,T.; Schaller,M.; Fischer,D.; Walsh,C.; Schulz,S.E.: Investigation of physical and chemical property changes of ultra low-k SiOCH in aspect of cleaning and chemical repair processes.. Microelectronic Engineering, 87, 457 (2010) |
| Oszinda,T.; Schaller,M.; Leppack,S.; Schulz,S.E.: Restoration of plasma damaged porous ultra low-k SiOCH films: A coating process with UV activation versus a vapor phase process with thermal activation. Advanced Metallization Conference (AMC 2010), Albany, NY (USA), 2010 Oct 5 - 7; MRS Conference Proc.; Materials Research Society, pp 55 - 64 (ISBN 978-1-6051-1218-3, ISSN 1048-0854) |
| Oszinda,T.; Schaller,M.; Schulz,S.E.: Chemical Repair of Plasma Damaged Porous Ultra Low-k SiOCH Film Using a Vapor Phase Process. Journal of the Electrochemical Society, 157, 12 (2010) pp H1140 - H1147 (ISSN 0013-4651) |
| Schulz,S.E.; Gessner,T.: Neue Materialien und Technologien für Nanoelektronik und Sensorik. VµE, 40 (2010) p 16 |
| Schulze,K.; Jaschinsky,P.; Erben,J.; Gutsch,M.; Blaschta,F.; Freitag,M.; Schulz,S.E.; Steidel,K.; Hohle,C.; Gessner,T.; Kuecher,P.: Variable-Shaped E-Beam lithography enabling process development for future copper Damascene technology (Poster). 36th International Conference on Micro- and Nanoengineering (MNE), Genoa (Italy), 2010 Sept 19-22 |
| Tuchscherer,A.; Shen,Y.; Jakob,A.; Mothes,R.; Al-Anber,M.; Walfort,B.; Rueffer,T.; Fruehauf,S.; Ecke,R.; Schulz,S.E.; Gessner,T.; Lang,H.: Lewis-base Copper(I)Formates: Synthesis, Reaction Chemistry, Structural Characterization and Their Use as Spin-Coating Precursors for Copper Deposition. Inorganica Chimica Acta, 365, 2 (2010) pp 10 - 19 (ISSN 0020-1693) |
| Waechtler,T.; Ding,S.-F.; Hofmann,L.; Mothes,R.; Xie,Q.; Oswald,S.; Detavernier,C.; Schulz,S.E.; Qu,X.-P.; Lang,H.; Gessner,T.: ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. Materials for Advanced Metallization (MAM), Mechelen (Belgium), 2010 Mar 7-10 |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Ruelke,H.; Schulz,S.E.; Gessner,T.: Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS. MAM 2009, Grenoble (France), 2009 Mar 9-11; Microelectronic Engineering, 87 (2010) pp 337-342 (ISBN 0167-9317 (ISSN)) |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Zimmermann,H.; Ruelke,H.; Lang,N.; Roepcke,J.; Schulz,S.E.; Gessner,T.: Improvement of etch processes for SiCOH materials with novel in situ diagnostic and evaluation methods. AMC, Baltimore (USA), October 13-15, 2009; Proceeding of the Advanced Metallization Conference 2009, pp 101-110 (ISBN 987-1-60511-218-3) |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Zimmermann,H.; Ruelke,H.; Lang,N.; Roepcke,J.; Schulz,S.E.; Gessner,T.: Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma. Materials for Advanced Metallization MAM 2010, Mechelen (Belgium), 2010 Mar 7-10 |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Zimmermann,H.; Ruelke,H.; Lang,N.; Roepcke,J.; Schulz,S.E.; Gessner,T.: Etch processes for dense and porous SiCOH materials: plasma states and process results. 3rd International Workshop Plasma Etch and Strip in Microelectronics, PESM 2010, Grenoble (France), 4-5 March 2010 |
| Zimmermann,S.; Ahner,N.; Fischer,T.; Schulz,S.E.; Gessner,T.: Talk: A combined Etch, Cleaning and k-restore Process for less damage integration of ultra low-k materials. SEMICON 2010, Dresden (Germany), October 19-21, 2010 |
