Publikationen
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Jahr 2009
| Ahner,N.; Fischer,T.; Zimmermann,S.; Schaller,M.; Prager,L.; Schulz,S.E.: UV assisted curingg of pplasma damagged porous ultralow‐k materials for a k-recovery process: influence of curing‐cycle modifications (Poster). Advanced Metallization Conference, Baltimore, Maryland (USA), 2009 Oct 13-15 |
| Ahner,N.; Schaller,M.; Bartsch,C.; Baryschpolec,E.; Schulz,S.E.: Surface energy and wetting behaviour of plasma etched porous SiCOH surfaces and plasma etch residue cleaning solutions. Solid State Phenomena, 145-146 (2009) pp 319-322 |
| Ahner,N.; Schulz,S.E.; Zacher,M.: Surfactants as an Additive to Wet Cleaning Solutions for Plasma Etch Residue Removal: Compatibility to a Porous CVD-SiCOH Ultra Low-k Dielectric Material . 216th ECS Meeting , Vienna, Austria, October 4 - October 9 2009; ECS Transactions, Volume 25 Issue 5 (2009) pp 87-94 |
| Bonitz,J.; Hermann,S.; Loschek,S.; Liu,P.; Schulz,S.E.: Selective deposition of aligned carbon nanotubes for NEMS applications. GMM-Workshop “Mikro-Nano-Integration”, Seeheim, 2009 Mar 12-13 (ISBN 978-3-8007-3155-8) |
| Ecke,R.; Froemel,J.; Schulz,S.E.; Wiemer,M.; Gessner,T.: Process Development for Smart Systems Integration in MEMS. mst news, 03/09 (2009) pp 35-36 |
| Hofmann,L.; Braeuer,J.; Baum,M.; Schulz,S.E.; Gessner,T.: Electrochemical deposition of reactive nanoscale metallization systems for low temperature bonding in 3D integration. Talk; 2009 Advanced Metallization Conference (AMC 2009), Baltimore, MD (USA), 2009 Oct 13-15 |
| Hofmann,L.; Ecke,R.; Schulz,S.E.; Gessner,T.: Metallisierungsverfahren für die 3D Integration in der Mikroelektronik und Mikrosystemtechnik. 12. Werkstofftechnisches Kolloquium, Chemnitz, 2009 Oct 1-2; Werkstoffe und Werkstofftechnische Anwendungen, Tagungsband, 35 (2009) pp 120-125 (ISBN 978-3-00-029007-7/1439-1597) |
| Schulz,S.E.; Waechtler,T.; Hofmann,L.: Copper Films Grown via Copper Oxide ALD: Routes and Challenges for Integration with Next-Generation Interconnect Materials. Invited Talk; Advanced Metallization Conference 2009, 19th Asian Session (ADMETA 2009), Tokyo (Japan), 2009 Oct 19-21 |
| Schulze,K.; Schulz,S.E.; Koerner,H.; Gessner,T.: Airgap Integration: Fabrication by Sacrificial Etch, Thermal and Mechanical Behavior, Reliability (Talk). Materials for Advanced Metallization (MAM), Grenoble (France), 2009 Mar 8-11 |
| Schulze,K.; Schulz,S.E.; Koerner,H.; Gessner,T.: Airgap Structures by using Sacrificial Wet Etch: Fabrication, Thermal and Mechanical Behaviour, Reliability. MRS Conf. Proc. AMC XXIV, Materials Research Society, Warrendale PA (2009), pp 41-52 (ISBN 1048-0854 / ISSN 978-1-60511-125-4) |
| Waechtler,T.; Hofmann,L.; Mothes,R.; Schulze,S.; Schulz,S.E.; Gessner,T.; Lang,H.; Hietschold,M.: Copper Oxide ALD from a Cu(I) beta-Diketonate: Growth Studies and Application as Seed Layers for Electrochemical Copper Deposition. 216th ECS Meeting, Vienna (Austria), 2009 Oct 4-9 |
| Waechtler,T.; Hofmann,L.; Schulz,S.E.: Copper Films Grown via Copper Oxide ALD: Routes and Challenges for Integration with Next-Generation Interconnect Materials. Invited Talk; 2009 Advanced Metallization Conference (AMC 2009), Baltimore, MD (USA), 2009 Oct 13-15 |
| Waechtler,T.; Oswald,S.; Roth,N.; Jakob,A.; Lang,H.; Ecke,R.; Schulz,S.E.; Gessner,T.; Moskvinova,A.; Schulze,S.; Hietschold,M.: Copper Oxide Films Grown by Atomic Layer Deposition from Bis(tri-n-butylphosphane)copper(I)acetylacetonate on Ta, TaN, Ru, and SiO2. J. Electrochem. Soc., 156 (2009) pp H453-H459 (ISSN 0013-4651) |
| Waechtler,T.; Roth,N.; Mothes,R.; Schulze,S.; Schulz,S.E.; Gessner,T.; Lang,H.; Hietschold,M.: Copper Oxide ALD from a Cu(I) beta-Diketonate: Detailed Growth Studies on SiO2 and TaN . ECS Trans., 25 (2009) pp 277-287 (ISSN 1938-5862) |
| Waechtler,T.; Schulze,S.; Hofmann,L.; Hermann,S.; Roth,N.; Schulz,S.E.; Gessner,T.; Lang,H.; Hietschold,M.: Detailed Study of Copper Oxide ALD on SiO2, TaN, and Ru. AVS 9th International Conference on Atomic Layer Deposition (ALD 2009), Monterey, CA (USA), 2009 Jul 19-22 |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Ruelke,H.; Schulz,S.E.; Gessner,T.: Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS. Materials for Advanced Metallization MAM 2009, Grenoble (France), 2009 Mar 9-11 |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Zimmermann,H.; Ruelke,H.; Lang,N.; Roepcke,J.; Schulz,S.E.; Gessner,T.: Influence of the additives argon, O2, C4F8, H2, N2 and CO on plasma conditions and process results during the etch of SiCOH in CF4 plasma. Materials for Advanced Metallization MAM 2010, Mechelen (Belgium), 2010 Mar 7-10 |
| Zimmermann,S.; Ahner,N.; Blaschta,F.; Schaller,M.; Zimmermann,H; Ruelke,H.; Lang,N.; Roepcke,J.; Schulz,S.E.; Gessner,T.: Talk: Improvement of etch processes for SiCOH materials with novel in situ diagnostic and evaluation methods. AMC 2009, Baltimore (USA), October 13-15, 2009; Advanced Metallization Conference |
| Zimmermann,S.; Blaschta,F.; Schaller,M.; Ruelke,H; Schulz,S.E.; Gessner,T.: Investigation of etch processes of dense and porous low-k dielectrics using OES and QMS as in situ diagnostic methods. AMC, San Diego (USA); Proceedings of the Advanced Metallization Coneference 2008, pp 387-392 (ISBN 978-1-60511-125-4) |
