Publikationen
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Jahr 2011
Belsky,P.; Streiter,R.; Wolf,H.; Schulz,S.E.; Aubel,O.; Gessner,T.: Modeling of TDDB in advanced Cu interconnect systems under BTS conditions. Microelectronic Eng. (2011), in press |
Ding,S.-F.; Xie,Q.; Mueller,S.; Waechtler,T.; Lu,H.-S.; Schulz,S.E.; Detavernier,C.; Qu,X.-P.; Gessner,T.: The Inhibition of Enhanced Cu Oxidation on Ruthenium/Diffusion Barrier Layers for Cu Interconnects by Carbon Alloying into Ru. J. Electrochem. Soc., 158, 12 (2011) pp H1228-H1232 (ISSN 0013-4651) |
Fiedler,H.; Hermann,S.; Rennau,M.; Schulz,S.E.; Gessner,T.: Fabrication and characterisation of CNT via interconnects for application in ULSI circuits. AMC 2011, San Diego (USA), 2011 Oct 4-6; Poster presentation |
Fiedler,H.; Hermann,S.; Schulz,S.E.; Gessner,T.: Influence of copper on catalytic carbon nanotube growth process. IITC / MAM, Dresden (Germany), 2011 May 09-12; IEEE Proceedings (ISBN 978-1-4577-0501-4) |
Fiedler,H.; Hermann,S.; Schulz,S.E.; Gessner,T.: Influence of copper on the catalytic carbon nanotube growth process. MAM / IITC, Dresden (Germany); Poster presentation |
Fischer,T.; Ahner,N.; Zimmermann,S.; Schulz,S.E.: Influence of thermal cycles on the silylation process for recovering k-value and chemical structure of plasma damaged ultra-low-k materials. Microelectronic Eng. |
Fronk,M.; Mueller,S.; Waechtler,T.; Schulz,S.E.; Mothes,R.; Lang,H.; Zahn,D.R.T.; Salvan,G.: Magneto-optical Kerr-effect studies on copper oxide thin films produced by atomic layer deposition on SiO2. E-MRS Spring Meeting, Nice (France), 2011 May 9-13 |
Fronk,M.; Mueller,S.; Waechtler,T.; Schulz,S.E.; Zahn,D.R.T.; Salvan,G.: Magneto-optical Kerr effect studies of copper oxide and cobalt thin films. Poster presentation, DPG Frühjahrstagung, Dresden (Germany), 2011 Mar 13-18 |
Gessner,T.; Vogel,M.; Otto,T.; Schulz,S.E.; Baumann,R.R.: Smart Systems. CSTIC, Shanghai (China), 2011 03 13-14; China Semiconductor Technology International Conference 2011 (CSTIC), 2011 Mar 13-14, Shanghai (China), ECS Transactions, vol. 34 (1) 2011, 34, 1 (2011) pp 1059-1064 |
Hermann,S.; Ecke,R.; Schulz,S.E.; Gessner,T.: Novel nanostructure with vertically aligned carbon nanotubes: Synthesis, structural properties and applications. NT2011, Campridge (UK), 2011 Jul 10-16; Poster |
Jaschinsky,P.; Erben,J.; Choi,K.-H.; Schulze,K.; Gutsch,M.; Freitag,M.; Schulz,S.E.; Steidel,K.; Hohle,C.; Gessner,T.; Kuecher,P.: Variable-shaped e-beam lithography enabling process development for future copper damascene technology. Microelectronic Eng., 88 (2011) pp 1978-1981 (ISSN 0167-9317) |
Mueller,S.; Waechtler,T.; Tuchscherer,A.; Mothes,R.; Gordan,O.; Lehmann,D.; Haidu,F.; Ogiewa,M.; Gerlich,L.; Ding,S.-F.; Schulz,S.E.; Gessner,T.; Lang,H; Zahn,D.R.T.; Qu,X.-P.: Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems. Semiconductor Conference Dresden, Dresden, 2011 Sep 27-28; Oral presentation |
Mueller,S.; Waechtler,T.; Tuchscherer,A.; Mothes,R.; Gordan,O.; Lehmann,D.; Haidu,F.; Ogiewa,M.; Gerlich,L.; Ding,S.-F.; Schulz,S.E.; Gessner,T.; Lang,H; Zahn,D.R.T.; Qu,X.-P.: Thermal ALD of Cu via Reduction of CuxO films for the Advanced Metallization in Spintronic and ULSI Interconnect Systems. Semiconductor Conference Dresden, Dresden, 2011 Sep 27-28; IEEE proceedings |
Mueller,S.; Waechtler,T.; Tuchscherer,A.; Mothes,R.; Gordan,O.; Lehmann,D.; Haidu,F.; Schulz,S.E.; Gessner,T.; Lang,H.; Zahn,D.R.T.: An Approach for Cu ALD via Reduction of Ruthenium- Containing CuxO Films for the Metallization in Spintronic and ULSI Interconnect Systems. 11th International Conference on Atomic Layer Deposition (ALD 2011), Cambridge, MA USA, June 26-29; Oral presentation |
Waechtler,T.; Auerswald,E.; Hoebelt,I.; Nowack,M.; Noack,E.; Gollhardt,A.; Vogel,D.; Michel,B.; Schulz,S.E.; Gessner,T.: REM/FIB-Analytik für die Smart Systems Integration. ZEISS CrossBeam Workshop, Jena (Germany), 2011 May 3-4 |
Waechtler,T.; Ding,S.-F.; Hofmann,L.; Mothes,R.; Xie,Q.; Oswald,S.; Detavernier,C.; Schulz,S.E.; Qu,X.-P.; Lang,H.; Gessner,T.: ALD-grown seed layers for electrochemical copper deposition integrated with different diffusion barrier systems. Microelectron. Eng., 88 (2011) pp 684-689 (ISSN 0167-9317) |
Waechtler,T.; Mueller,S.; Hofmann,L.; Mothes,R.; Ding,S.-F.; Schulz,S.E.; Lang,H.; Qu,X.P.; Gessner,T.: Copper Films Grown via Copper Oxide ALD Integrated with Different Liner Materials for Interconnect Applications. 11th International Conference on Atomic Layer Deposition (ALD 2011), Cambridge, MA USA, June 26-29; Oral presentation |
Waechtler,T.; Mueller,S.; Mothes,R.; Tuchscherer,A.; Schubert,C.; Lehmann,D.; Haidu,F.; Schaefer,P.; Schulz,S.E.; Lang,H.; Albrecht,M.; Zahn,D.R.T.; Gessner,T.: Copper ALD for Applications in ULSI Metallization Systems and Spintronic Layer Stacks. IMEC Workshop on Atomic Layer Deposition for Applications in Nanotechnology, Leuven (Belgium), 2011 Nov 28-29 |
Waechtler,T.; Mueller,S.; Schulz,S.E.; Gessner,T.: Process Development for the ALD of Thin Copper Films for ULSI Metallization Systems and Magnetosensors. SENTECH Plasma Process Technology Seminar, Berlin (Germany), 2011 Nov 22 |
Zimmermann,S.; Ahner,N.; Fischer,T.; Schaller,M.; Schulz,S.E.; Gessner,T.: Talk: A less damage patterning regime for a successful integration of ultra low-k materials in modern nanoelectronic devices . MRS Spring Meeting 2011, San Francisco (USA), April 25 - 29, 2011 |
Zimmermann,S.; Reich,R.; Zacher,M.; Schulz,S.E.; Gessner,T.: Prediction of wafer homogeneity maps using a virtual metrology scheme consisting of time resolved OES measurements and a neural network. 11th European Advanced Equipment Control / Advanced Process Control Conference, AEC/APC 2011, Dresden (Germany), April 4-6, 2011 |